Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering

Won Ja Min; Jwasoon Kim; Kyungsu Park; Gabriel Marmitt; Jonathan England; Dae Won Moon

doi:10.1021/acs.analchem.9b02687

Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering

Anal Chem. 2019 Jul 16;91(14):9315-9322. doi: 10.1021/acs.analchem.9b02687. Epub 2019 Jul 5.

Authors

Won Ja Min¹, Jwasoon Kim¹, Kyungsu Park¹, Gabriel Marmitt², Jonathan England³, Dae Won Moon⁴

Affiliations

¹ MEIS Development Team , Korea Materials and Analysis Corporation , Techno 8-ro 33 , Yuseng-gu , Daejon 305-500 , Republic of Korea.
² Institute of Physics , Federal University of Rio Grande do Sul , Av. Bento Gonçalves 9500 , CP 15051, CEP 91501-970 Porto Alegre , Rio Grande do Sul , Brazil.
³ Varian Semiconductor Equipment, Applied Materials Implant Division, Gloucester MA, USA; Surrey Ion Beam Centre, Advanced Technology Institute , University of Surrey , Guildford GU2 7XH , U.K.
⁴ Department of New Biology , DGIST, Dalseong , Daegu 711-873 , Republic of Korea.

PMID: 31276386
DOI: 10.1021/acs.analchem.9b02687

Abstract

We have developed a methodology that analyzes the dimensions and conformal doping profiles in fin field effect transistors (FinFET) using time-of-flight medium energy ion scattering (TOF-MEIS). The structure of a 3D FinFET and As dopant profiles were determined by comprehensive simulations of TOF-MEIS measurements made in three different scattering geometries. The width and height of a FinFET and the As doping profiles in the top, side, and bottom of fin were analyzed simultaneously. The results showed the dimension and conformal doping profile of nanostructures with complex shape can be determined by TOF-MEIS nondestructively, quantitatively, and with subnm depth resolution without any sputtering and matrix effects.

Publication types

Research Support, Non-U.S. Gov't