The utilization of three-dimensional (3D) structures in next-generation nanodevices has been attractive due to the exceptional features they offer. These 3D structures can reduce component space and improve device properties compared to thin-film electronic components. The type of transistor applied in 3D nanodevices is one of the most widely studied components due to its rich physics and ubiquitous application. In this paper, we report a complete functionalized component, a 3D vertical resonant photo-effect-transistor (VRPET), which is realized with the functionalized nanowire current channel, asymmetric ohmic/Schottky contacts, and an ultraviolet photogate with an organic light emission diode (OLED) excitation. To enhance the VRPET performance, analyses of the design and fabrication parameters were carried out, where the focus was specifically on the relationship between light resonance and absorption. The transistor developed here can operate up to a high voltage of 16.5 V and control currents up to 50 μA with an ultrastable performance under a strong electromagnetic interference. The VRPET with excellent properties is a step toward achieving integrated photoelectric devices and corresponding applications.
Keywords: OLED gate; anti-electromagnetic interference; nanowire channel; photo-effect-transistor; resonance.