Strong Hot Carrier Effects in Single Nanowire Heterostructures

Iraj Abbasian Shojaei; Samuel Linser; Giriraj Jnawali; N Wickramasuriya; Howard E Jackson; Leigh M Smith; Fariborz Kargar; Alexander A Balandin; Xiaoming Yuan; Philip Caroff; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/acs.nanolett.9b01345

Strong Hot Carrier Effects in Single Nanowire Heterostructures

Nano Lett. 2019 Aug 14;19(8):5062-5069. doi: 10.1021/acs.nanolett.9b01345. Epub 2019 Jul 2.

Affiliations

¹ Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States.
² Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States.
³ School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process , Central South University , 932 South Lushan Road , Changsha , Hunan 410083 , P.R. China.
⁴ Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia.

PMID: 31242390
DOI: 10.1021/acs.nanolett.9b01345

Abstract

We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs_0.7Sb_0.3/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs_0.7Sb_0.3 nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.

Keywords: Hot carrier effects; carrier thermalization; hot phonons.