High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Chao Yang; Xiaorong Luo; Tao Sun; Anbang Zhang; Dongfa Ouyang; Siyu Deng; Jie Wei; Bo Zhang

doi:10.1186/s11671-019-3025-8

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN_x Passivation Layer

Nanoscale Res Lett. 2019 Jun 4;14(1):191. doi: 10.1186/s11671-019-3025-8.

Authors

Chao Yang¹, Xiaorong Luo², Tao Sun¹, Anbang Zhang¹, Dongfa Ouyang¹, Siyu Deng¹, Jie Wei¹, Bo Zhang¹

Affiliations

¹ School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
² School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China. xrluo@uestc.edu.cn.

Abstract

In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R_{ON, D}) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiN_x passivation layer between the gate and drain electrodes. Instead of the fluorine ion implantation in the thin AlGaN barrier layer, the peak position and vacancy distributions are far from the two-dimensional electron gas (2DEG) channel in the case of fluorine ion implantation in the thick passivation layer, which effectively suppresses the direct current (DC) static and pulsed dynamic characteristic degradation. The fluorine ions in the passivation layer also extend the depletion region and increase the average electric field (E-field) strength between the gate and drain, leading to an enhanced BV. The BV of the proposed HEMT increases to 803 V from 680 V of the conventional AlGaN/GaN HEMT (Conv. HEMT) with the same dimensional parameters. The measured R_{ON, D} of the proposed HEMT is only increased by 23% at a high drain quiescent bias of 100 V, while the R_{ON, D} of the HEMT with fluorine ion implantation in the thin AlGaN barrier layer is increased by 98%.

Keywords: AlGaN/GaN HEMT; Breakdown voltage; Dynamic ON-resistance; Fluorine ion implantation; SiNx passivation layer.

Abstract

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