Long-term drift of Si-MOS quantum dots with intentional donor implants

M Rudolph; B Sarabi; R Murray; M S Carroll; Neil M Zimmerman

doi:10.1038/s41598-019-43995-w

Long-term drift of Si-MOS quantum dots with intentional donor implants

Sci Rep. 2019 May 21;9(1):7656. doi: 10.1038/s41598-019-43995-w.

Authors

M Rudolph¹, B Sarabi², R Murray², M S Carroll¹, Neil M Zimmerman³

Affiliations

¹ Sandia National Laboratories, Albuquerque, NM, 87185, USA.
² National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
³ National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. neil.zimmerman@nist.gov.

Abstract

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1/f noise dependence, and a noise strength as low as [Formula: see text], comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/f noise for devices with less than 50 implanted donors near the qubit.