Effect of Various Geometry Parameters on the Performance of Nanoplate Field Effect Transistor with Negative Capacitance

Changbeom Woo; Jang Kyu Lee; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin

doi:10.1166/jnn.2019.17104

Effect of Various Geometry Parameters on the Performance of Nanoplate Field Effect Transistor with Negative Capacitance

J Nanosci Nanotechnol. 2019 Oct 1;19(10):6736-6740. doi: 10.1166/jnn.2019.17104.

Authors

Changbeom Woo¹, Jang Kyu Lee¹, Myounggon Kang², Jongwook Jeon³, Hyungcheol Shin¹

Affiliations

¹ Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-747, South Korea.
² Department of Electronics Engineering, Korea National University of Transportation, Chungju-City, 380-702, South Korea.
³ Department of Electronics Engineering, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul, 05029, South Korea.

PMID: 31027020
DOI: 10.1166/jnn.2019.17104

Abstract

In this paper, we investigate the impact of geometry parameters such as ferroelectric layer thickness (T_FE), extension length (L_Ext), overlap length (L_ov) on negative capacitance FET (NCFET). The NCFET is designed using HfZrO₂ (HZO) ferroelectric materials and the Nanoplate FET (NPFET) presented as a next generation device. We use the 3-D TCAD Sentaurus simulator to analyze characteristics of the NCFET. The NCFET designed considering the stable condition overcomes the Boltzmann limit (i.e., the physical limit in the S.S., which is 60 mV/decade at 300 K) through the steep subthreshold swing (S.S.) and exhibits negative Drain-induced barrier lowering (DIBL) phenomenon. When examining the characteristics of NPFET and NCFET according to L_Ext and L_ov, the NCFET exhibits gate capacitance (C_gg) tendency opposite to that of the NPFET. The NCFET with the scaled VDD has a significant advantage over the gate delay (τ_d). The NCFET has better performance in environments where conventional device is more vulnerable to short channel effects (SCEs).