Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor

Jang Kyu Lee; Changbeom Woo; Jongsu Kim; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin

doi:10.1166/jnn.2019.17106

Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor

J Nanosci Nanotechnol. 2019 Oct 1;19(10):6710-6714. doi: 10.1166/jnn.2019.17106.

Authors

Jang Kyu Lee¹, Changbeom Woo¹, Jongsu Kim¹, Myounggon Kang², Jongwook Jeon³, Hyungcheol Shin¹

Affiliations

¹ Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
² Department of Electronics Engineering, Korea National University of Transportation, Chungju, 380-702, Korea.
³ Department of Electronics Engineering, Konkuk University, Seoul 05029, Korea.

PMID: 31027015
DOI: 10.1166/jnn.2019.17106

Abstract

We investigate the interrelation between some variations and the stability of Negative Capacitance Field-Effect Transistors (NC FETs). When a variation effect is considered, stability issues which are making hysteretic operation should be considered for NC FETs as well. In this paper, to make sure of stability and hysteresis-free operation, a thickness margin of ferroelectric layer is suggested. It is the easiest solution for designing and surest method of vouching for hysteresis-free operation. Although some disadvantages which make subthreshold swing (SS) a bit higher than without a margin on thickness of ferroelectric layer (T_FE) can be caused, both still high performance and stable operation can be achieved.