A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.
Keywords: dynamic random-access memory storage capacitor; leakage current; reliability; technology-computer-aided design; time-dependent dielectric breakdown.