Various functional devices including p-n forward, backward, and Zener diodes are realized with a van der Waals heterostructure that are composed of molybdenum disulfide (MoS2) and molybdenum ditelluride (MoTe2) by changing the thickness of the MoTe2 layer and common gate bias. In addition, the available negative differential transconductance of the heterostructure is utilized to fabricate a many-valued logic device that exhibits three different logic states ( i.e., a ternary inverter). Furthermore, the multivalued logic device can be transformed into a binary inverter using laser irradiation. This work provides a comprehensive understanding of the device fabrication and electronic-device design utilizing thickness control.
Keywords: multifunctional heterostructure; multivalued logic; transition-metal dichalcogenides; tunneling diode; van der Waals heterostructure.