Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly

Mengfan Guo; Jianyong Jiang; Jianfeng Qian; Chen Liu; Jing Ma; Ce-Wen Nan; Yang Shen

doi:10.1002/advs.201801931

Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly

Adv Sci (Weinh). 2019 Jan 28;6(6):1801931. doi: 10.1002/advs.201801931. eCollection 2019 Mar 20.

Authors

Mengfan Guo¹, Jianyong Jiang¹, Jianfeng Qian¹, Chen Liu¹, Jing Ma¹, Ce-Wen Nan¹, Yang Shen^{1

2}

Affiliations

¹ School of Materials Science and Engineering State Key Lab of New Ceramics and Fine Processing Tsinghua University Beijing 100084 China.
² Center for Flexible Electronics Technology Tsinghua University Beijing 100084 China.

Abstract

Ferroelectric memories are endowed with high data storage density by nanostructure designing, while the robustness is also impaired. For organic ferroelectrics favored by flexible memories, low Curie transition temperature limits their thermal stability. Herein, a ferroelectric random access memory (FeRAM) is demonstrated based on an array of P(VDF-TrFE) lamellae by self-assembly. Written data shows enhanced thermal endurance up to 90 °C and undergoes 12 thermal cycles between 30 and 80 °C with little volatilization. The promoted thermal stability is attributed to pinning effect at interfaces between grain boundaries and lamellae, where charged domain walls and charged defects are coupled. These results provide a strategy for improving robustness of organic flexible FeRAMs, and reveal an attracting coupling effect between different phases of ferroelectric polymer.

Keywords: P(VDF‐TrFE); ferroelectric random access memories (FeRAMs); grain boundaries; self‐assembly; thermal stability.