Enhancing Planar Perovskite Solar Cell Performance by Doping Zr in TiOx Layer

Chan Hyuk Ji; Kee Tae Kim; Se Young Oh

doi:10.1166/jnn.2019.16678

Enhancing Planar Perovskite Solar Cell Performance by Doping Zr in TiO_x Layer

J Nanosci Nanotechnol. 2019 Aug 1;19(8):4691-4694. doi: 10.1166/jnn.2019.16678.

Authors

Chan Hyuk Ji¹, Kee Tae Kim¹, Se Young Oh¹

Affiliation

¹ Department of Chemical & Biomolecular Engineering, Sogang University, Seoul 04107, Korea.

PMID: 30913770
DOI: 10.1166/jnn.2019.16678

Abstract

In this work, a Zr-doped TiO_x layer is introduced into p-i-n planar-structure perovskite solar cells via a simple sol-gel method. The prepared device configuration is ITO/PEDOT:PSS/CH₃NH₃PbI_xCl_3-x/PC60BM/Zr-TiO_x/Al. The performance of the perovskite solar cells was investigated through measurements of the current-voltage characteristics, impedance analysis, and photocurrent decay. A power conversion efficiency of 15.43% was measured under 1 sun condition; this level of efficiency is 27% higher than that of the device with a Zr-free TiO_x layer. Additionally, the incorporation of Zr into the TiO_x layer improved the carrier extraction as a result of the oxygen vacancy trap passivation. Lastly, the trap passivation of the Zr-TiO_x film was confirmed by analyzing the photoluminescence spectrum.