Single-photon transistor based on cavity electromagnetically induced transparency with Rydberg atomic ensemble

Y M Hao; G W Lin; X M Lin; Y P Niu; S Q Gong

doi:10.1038/s41598-019-41185-2

Single-photon transistor based on cavity electromagnetically induced transparency with Rydberg atomic ensemble

Sci Rep. 2019 Mar 18;9(1):4723. doi: 10.1038/s41598-019-41185-2.

Authors

Y M Hao¹, G W Lin², X M Lin³, Y P Niu⁴, S Q Gong⁵

Affiliations

¹ Department of Physics, East China University of Science and Technology, Shanghai, 200237, China.
² Department of Physics, East China University of Science and Technology, Shanghai, 200237, China. gwlin@ecust.edu.cn.
³ College of Physics and Energy, Fujian Normal University, Fuzhou, 350108, China.
⁴ Department of Physics, East China University of Science and Technology, Shanghai, 200237, China. niuyp@ecust.edu.cn.
⁵ Department of Physics, East China University of Science and Technology, Shanghai, 200237, China. sqgong@ecust.edu.cn.

Abstract

A scheme is presented to realize a single-photon transistor based on cavity quantum electrodynamics (QED) with Rydberg atomic ensemble. By combining the advantages of the cavity-enhanced interaction and Rydberg blockade, we achieve a high gain single-photon transistor. The numerical calculation shows that by using one single gate photon more than one thousand source photons can be switched.

Abstract

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