Mesoscopic fluctuations, manifesting the quantum interference (QI) of electrons, have been theoretically proposed in bilayer Coulomb drag systems. Unfortunately, these phenomena are usually observed at cryogenic temperatures, which severely limits their novel physics for pragmatic applications. In this paper, observation of room-temperature QI and Coulomb drag in a multilayer WSe2 transistor is reported via graphene contacts separately at its top and bottom layers. The central layers of WSe2 act as an insulating region with a width of few nanometers, which spatially separates the top and bottom conducting channels and provides a strong Coulomb interaction between them, leading to large conductance oscillations at room temperature. The gradual suppression of the oscillations with the increase in the applied magnetic field and/or injected current further confirms the QI phenomenon. With the decrease in temperature, the Coulomb drag effect is exhibited in the system owing to the increased thickness of the insulating region. This study reveals a novel approach for realization of advanced quantum electronics operating at high temperatures.
Keywords: Coulomb drag; carrier transport; heterostructures; quantum interference; tungsten diselenide.
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