Highly ordered silicon nanowires (SiNWs) were fabricated by nanoimprint lithography and Bosch etching methods. A polycrystalline silicon shell was grown to form a radial p-n junction. To enhance its anti-reflection properties and conductivity, a thin ITO layer was deposited on the SiNWs solar cell, then a micro-grid electrode was introduced to minimize the metal areas to maximize carrier collection. Finally, shorter nanowires were used to reduce surface recombination and achieve an efficiency of 10.5%. This work is expected to show some possible techniques to improve the performance of silicon nanostructure solar cell.