Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

Zongpeng Ma; Shouning Chai; Qingliang Feng; Liang Li; Xiaobo Li; Lingli Huang; Dongyan Liu; Jie Sun; Ruibin Jiang; Tianyou Zhai; Hua Xu

doi:10.1002/smll.201805307

Chemical Vapor Deposition Growth of High Crystallinity Sb₂ Se₃ Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

Small. 2019 Mar;15(9):e1805307. doi: 10.1002/smll.201805307. Epub 2019 Feb 1.

Authors

Zongpeng Ma¹, Shouning Chai², Qingliang Feng³, Liang Li⁴, Xiaobo Li¹, Lingli Huang¹, Dongyan Liu¹, Jie Sun¹, Ruibin Jiang¹, Tianyou Zhai⁵, Hua Xu¹

Affiliations

¹ Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China.
² Chemistry and Chemical Engineering, Xi'an University of Architecture and Technology, Xi'an, 710055, P. R. China.
³ Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education, Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
⁴ Institute of Physical Science and Information Technology, School of Physics and Materials Science, Anhui University, Hefei, 230601, P. R. China.
⁵ State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.

PMID: 30706663
DOI: 10.1002/smll.201805307

Abstract

Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb₂ Se₃ nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb₂ Se₃ NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb₂ Se₃ NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb₂ Se₃ NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb₂ Se₃ NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W^-1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb₂ Se₃ NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb₂ Se₃ NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.

Keywords: CVD growth; anisotropy; antimony triselenide (Sb2Se3); nanowire; photodetector.

Abstract

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