Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Hong Gu; Feifei Tian; Chunyu Zhang; Ke Xu; Jiale Wang; Yong Chen; Xuanhua Deng; Xinke Liu

doi:10.1186/s11671-019-2872-7

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Nanoscale Res Lett. 2019 Jan 31;14(1):40. doi: 10.1186/s11671-019-2872-7.

Authors

Hong Gu^{1

2}, Feifei Tian³, Chunyu Zhang³, Ke Xu³, Jiale Wang¹, Yong Chen¹, Xuanhua Deng¹, Xinke Liu⁴

Affiliations

¹ College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China.
² Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
³ Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, 215123, People's Republic of China.
⁴ College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China. xkliu@szu.edu.cn.

Abstract

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10⁶ cm^{- 2}. With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V_on (0.70~0.78 V) and high current I_on/I_off ratio (9.9 × 10⁷~1.3 × 10¹⁰). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5 ns for the 100-, 200-, 300-, 400-, and 500-μm-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.

Keywords: Ge-doped GaN substrates; HVPE; Reverse recovery time; Vertical SBDs.

Grants and funding

2017YFB0404100/National Key Research and Development Plan