Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Ji Ung Lee; Ramya Cuduvally; Prathamesh Dhakras; Phung Nguyen; Harold L Hughes

doi:10.1038/s41598-018-36692-7

Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Sci Rep. 2019 Jan 24;9(1):525. doi: 10.1038/s41598-018-36692-7.

Authors

Ji Ung Lee¹, Ramya Cuduvally², Prathamesh Dhakras², Phung Nguyen², Harold L Hughes³

Affiliations

¹ Colleges of Nanoscale Science and Engineering, SUNY-Polytechnic Institute, Albany, NY, 12203, USA. jlee1@sunypoly.edu.
² Colleges of Nanoscale Science and Engineering, SUNY-Polytechnic Institute, Albany, NY, 12203, USA.
³ US Naval Research Laboratory, Washington, DC, 20375, USA.

Abstract

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori's model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical R_ON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.