Enhanced Efficiency of MAPbI₃ Perovskite Solar Cells with FAPbX₃ Perovskite Quantum Dots

Lung-Chien Chen; Ching-Ho Tien; Zong-Liang Tseng; Jun-Hao Ruan

doi:10.3390/nano9010121

Enhanced Efficiency of MAPbI₃ Perovskite Solar Cells with FAPbX₃ Perovskite Quantum Dots

Nanomaterials (Basel). 2019 Jan 19;9(1):121. doi: 10.3390/nano9010121.

Authors

Lung-Chien Chen¹, Ching-Ho Tien², Zong-Liang Tseng³, Jun-Hao Ruan⁴

Affiliations

¹ Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan. ocean@ntut.edu.tw.
² Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan. chtien@mail.ntut.edu.tw.
³ Department of Electronic Engineering and Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan. tw78787788@yahoo.com.tw.
⁴ Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan. bj031001@gmail.com.

Abstract

We describe a method to enhance power conversion efficiency (PCE) of MAPbI₃ perovskite solar cell by inserting a FAPbX₃ perovskite quantum dots (QD-FAPbX₃) layer. The MAPbI₃ and QD-FAPbX₃ layers were prepared using a simple, rapid spin-coating method in a nitrogen-filled glove box. The solar cell structure consists of ITO/PEDOT:PSS/MAPbI₃/QD-FAPbX₃/C₆₀/Ag, where PEDOT:PSS, MAPbI₃, QD-FAPbX₃, and C₆₀ were used as the hole transport layer, light-absorbing layer, absorption enhance layer, and electron transport layer, respectively. The MAPbI₃/QD-FAPbX₃ solar cells exhibit a PCE of 7.59%, an open circuit voltage (Voc) of 0.9 V, a short-circuit current density (Jsc) of 17.4 mA/cm², and a fill factor (FF) of 48.6%, respectively.

Keywords: FAPbX3; MAPbI3; perovskite; quantum dots; solar cells.