A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

Anbang Zhang; Qi Zhou; Chao Yang; Yuanyuan Shi; Wanjun Chen; Zhaoji Li; Bo Zhang

doi:10.1186/s11671-019-2860-y

A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

Nanoscale Res Lett. 2019 Jan 15;14(1):23. doi: 10.1186/s11671-019-2860-y.

Authors

Anbang Zhang¹, Qi Zhou², Chao Yang³, Yuanyuan Shi³, Wanjun Chen³, Zhaoji Li³, Bo Zhang⁴

Affiliations

¹ School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China. anbangzhang@outlook.com.
² School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China. zhouqi@uestc.edu.cn.
³ School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
⁴ School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China. zhangbo@uestc.edu.cn.

Abstract

An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than - 0.152%/^oC.

Keywords: AlGaN/GaN heterostructure; Reverse blocking current regulating diode (RB-CRD); Schottky barrier diode (SBD).

Abstract

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