Highly dispersed copper nanowire (CuNW) is an essential prerequisite for its practical application in various electronic devices. At present, the dispersion of CuNW is almost realized through the steric hindrance effect of polymers. However, the high post-treatment temperature of polymers makes this dispersion mechanism impractical for many actual applications. Here, after investigating the relationship between the electrostatic dispersion force and influence factors, an electrostatic dispersion mechanism is refined by us. Under the guidance of this mechanism, high dispersion of CuNW and a record low post-treatment temperature (80 °C) are realized simultaneously. The high dispersity endows CuNW with good stability (-45.66 mV) in water-based ink, high uniformity (65.7 ± 2.5 Ω sq-1) in the prepared transparent conducting film (TCF) (23 cm × 23 cm), and industrial film preparation process, which are the issues that hinder the widespread application of CuNW-based TCF at present. The low post-treatment temperature makes the application of CuNW possible on any substrate. In addition, the charge modifier, 2-mercaptoethanol, enables CuNW to resist oxidation well. Finally, flexible optoelectronic devices employing the CuNW film as the electrode are fabricated and show efficiencies comparable to those of optoelectronic devices on indium tin oxide/glass.
Keywords: copper nanowires; electrostatic dispersion mechanism; flexible optoelectronic devices; post-treatment temperatures; transparent conducting films.