Recently, high-resolution patterned metal oxide semiconductors (MOS) have gained considerable attention for enhanced gas sensing performance due to their polycrystalline nature, ultrasmall grain size (~5 nm), patternable properties, and high surface-to-volume ratio. Herein, we significantly enhanced the sensing performance of that patterned MOS by galvanic replacement, which allows for selective functionalization on ultrathin Cu₂O nanopatterns. Based on the reduction potential energy difference between the base channel material (Cu₂O) and the decorated metal ion (Pt2+), Pt could be selectively and precisely decorated onto the desired area of the Cu₂O nanochannel array. Overall, the Pt-decorated Cu₂O exhibited 11-fold higher NO₂ (100 ppm) sensing sensitivity as compared to the non-decorated sensing channel, the while the channel device with excessive Pt doping showed complete loss of sensing properties.
Keywords: chemical sensitization; galvanic replacement; gas sensor; high-resolution; nanopattern; p-type metal oxide.