Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions

Yunyan Zhang; Ana M Sanchez; Martin Aagesen; Suguo Huo; H Aruni Fonseka; James A Gott; Dongyoung Kim; Xuezhe Yu; Xingyou Chen; Jia Xu; Tianyi Li; Haotian Zeng; Giorgos Boras; Huiyun Liu

doi:10.1002/smll.201803684

Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions

Small. 2019 Jan;15(3):e1803684. doi: 10.1002/smll.201803684. Epub 2018 Dec 17.

Authors

Affiliations

¹ Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK.
² Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
³ Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark.
⁴ London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK.
⁵ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

PMID: 30556282
DOI: 10.1002/smll.201803684

Abstract

Nanowires (NWs) with radial p-i-n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency. However, it is difficult to make high-quality core-shell NW devices, especially single NW devices. Here, the key factors during the growth and fabrication process that influence the quality of single core-shell p-i-n NW devices are studied using GaAs(P) NW photovoltaics as an example. By p-doping and annealing, good ohmic contact is achieved on NWs with a diameter as small as 50-60 nm. Single NW photovoltaics are subsequently developed and a record fill factor of 80.5% is shown. These results bring valuable information for making single NW devices, which can further benefit the development of high-density integration circuits.

Keywords: contacts; devices; nanowires; photovoltaics; radial p-i-n junctions.

Abstract

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