Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Sushil Kumar Pandey; Hussain Alsalman; Javad G Azadani; Nezhueyotl Izquierdo; Tony Low; Stephen A Campbell

doi:10.1039/c8nr90273a

Correction: Controlled p-type substitutional doping in large-area monolayer WSe₂ crystals grown by chemical vapor deposition

Nanoscale. 2018 Dec 20;11(1):365. doi: 10.1039/c8nr90273a.

Authors

Sushil Kumar Pandey¹, Hussain Alsalman, Javad G Azadani, Nezhueyotl Izquierdo, Tony Low, Stephen A Campbell

Affiliation

¹ Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street, Minneapolis, Minnesota 55455, USA. campb001@umn.edu.

PMID: 30534732
DOI: 10.1039/c8nr90273a

Abstract

Correction for 'Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition' by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374-21385.

Publication types

Published Erratum