When the full-bridge converter works under the light load condition, the power efficiency obtained by the theoretical model is much different from that of the actual converter. Facing with this situation, an improved power loss model based on the typical power loss model is proposed. In this paper, the typical power loss model is called typical model for short and the improved power loss model is called proposed model for short. Firstly, the antiparallel freewheeling diodes at the arms of full-bridge circuit are taken into account. Every barrier junction capacitance of Schottky diode in the rectifier circuit is neglected. Then, the turning-off loss of full-bridge and the core loss of inductive components (the transformer and the filter inductor) in the typical model are compensated and modified by combining the theoretical values with the measured input current under the minimum and the maximum output current. In addition, it also corrects the equivalent resistance related to the conduction loss of converter. Eventually, the proposed model is established. The rise time and fall time of the midpoint voltage of two arms, and the fluctuation degree of the reverse bias voltage related to the Schottky rectifier diodes are regarded as the local indexes. The conduction time of the metal oxide semiconductor field effect transistor (MOSFET) in each switching period, and the power efficiency of converter are regarded as the global indexes. Based on the analyses, the local indexes are compared qualitatively, while the global indexes are compared quantitatively. It is found that the differences of the local indexes between the proposed model and the experiment are smaller than those between the typical model and the experiment. Meanwhile, the global indexes of the proposed model are closer to the experimental results. Therefore, it can be further demonstrated that the proposed model is more approximate to the actual converter than the typical model.