Analysis on Self Heating Effect for a Trenched Source/Drain Structure in Triple-Stacked Nanowire FET

Hyunsuk Kim; Do-Kyun Son; Ilho Myeong; Myounggon Kang; Hyungcheol Shin

doi:10.1166/jnn.2019.15811

Analysis on Self Heating Effect for a Trenched Source/Drain Structure in Triple-Stacked Nanowire FET

J Nanosci Nanotechnol. 2019 Apr 1;19(4):2281-2284. doi: 10.1166/jnn.2019.15811.

Authors

Hyunsuk Kim¹, Do-Kyun Son¹, Ilho Myeong¹, Myounggon Kang², Hyungcheol Shin¹

Affiliations

¹ Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-747, South Korea.
² Department of Electronics Engineering, Korea National University of Transportation, Chungju, 380-702, South Korea.

PMID: 30486982
DOI: 10.1166/jnn.2019.15811

Abstract

Accurate evaluations of self-heating effects (SHEs) in highly down-scaled devices have become essential for improved performance and reliability of such devices. In this paper, SHEs in a triplestacked nanowire FETs (NWFETs) with trenched source drain structures, a structure which may be capable of obtaining a high on-current (I_on) in the 5 nm node, were analyzed through TCAD simulations. It was confirmed that trench methods for triple-stacked devices can effectively boost I_on if disregarding SHEs. However, because SHEs generated under high I_on prevent any increase of I_on, the trench steps should be adjusted appropriately considering the balance between the contact resistance and the SHEs. In order to obtain a proper trench depth, several steps were compared through a simulation. To support the results, the thermal resistance (R_th) was used in the comparison.