Silicon Carbide (SiC)-based devices have been proposed to replace conventional silicon-based devices based on their physical properties and have become an active research topic. Several studies have reported a high breakdown voltage in SiC-powered devices in the implanted limited field ring structure. However, the problems of ion-implanted edge termination in field-limited rings appear to be associated with the ion implantation process, such as damage to the grid and leakage current increases due to ion implantation. In this paper, SiC Schottky Barrier Diode (SBD) Floating Metal Ring (FMR) edge-termination structures are produced regardless of whether we are using ion implantation and proceed with the breakdown voltage comparison. The experimental method for producing an SiC SBD after FMR structural design through a simulation was performed with a comparative analysis of the breakdown voltage with No-FMR and FMR. We measured the breakdown voltage of the fabricated No-FMR and FMR, and the results confirmed that FMR SiC SBD was approximately 35% higher than the breakdown voltage No-FMR. It was confirmed that the breakdown voltage increased due to the balancing effect of the electric field structure of FMR.