Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Yan Zhou; Chengyuan Dong

doi:10.3390/mi9110603

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Micromachines (Basel). 2018 Nov 17;9(11):603. doi: 10.3390/mi9110603.

Authors

Yan Zhou¹, Chengyuan Dong²

Affiliations

¹ Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China. zhou_yan@sjtu.edu.cn.
² Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China. cydong@sjtu.edu.cn.

Abstract

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO₂ or Al₂O₃ films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO₂ PV layers showed a better improvement effect than the Al₂O₃ because the former had a smaller characteristic length (~5 nm) than that of the Al₂O₃ PV layers (~10 nm).

Keywords: amorphous InGaZnO (a-IGZO); characteristic length; passivation layer; positive gate bias stress (PGBS); thin-film transistor (TFT).