Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

Ke Han; Xubing Guo; Stewart Smith; Zhongliang Deng; Wuyu Li

doi:10.3390/mi9080390

Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

Micromachines (Basel). 2018 Aug 6;9(8):390. doi: 10.3390/mi9080390.

Authors

Ke Han¹, Xubing Guo², Stewart Smith³, Zhongliang Deng⁴, Wuyu Li⁵

Affiliations

¹ School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China. hanke@bupt.edu.cn.
² School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China. gxb@bupt.edu.cn.
³ School of Engineering, University of Edinburgh, Edinburgh EH9 3FF, UK. stewart.smith@ed.ac.uk.
⁴ School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China. dengzhl@bupt.edu.cn.
⁵ School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China. liwuyu@bupt.edu.cn.

Abstract

This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.

Keywords: RF MEMS; high-capacitance-ratio; metal-insulator-metal.