Fast Deposition of Aligning Edge-On Polymers for High-Mobility Ambipolar Transistors

Yingying Jiang; Jinyang Chen; Yunlong Sun; Qingyuan Li; Zhengxu Cai; Junyu Li; Yunlong Guo; Wenping Hu; Yunqi Liu

doi:10.1002/adma.201805761

Fast Deposition of Aligning Edge-On Polymers for High-Mobility Ambipolar Transistors

Adv Mater. 2019 Jan;31(2):e1805761. doi: 10.1002/adma.201805761. Epub 2018 Nov 12.

Authors

Yingying Jiang^{1

2}, Jinyang Chen^{1

2}, Yunlong Sun^{1

2}, Qingyuan Li^{1

2}, Zhengxu Cai³, Junyu Li⁴, Yunlong Guo¹, Wenping Hu⁵, Yunqi Liu^{1

2}

Affiliations

¹ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China.
² School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
³ Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Material Science & Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China.
⁴ DSM DMSC R&D Solutions, P.O. Box 18, 6160, MD Geleen, The Netherlands.
⁵ Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, P. R. China.

PMID: 30417512
DOI: 10.1002/adma.201805761

Abstract

Fast deposition of aligning ambipolar polymers for high-performance organic field-effect transistors (OFETs) and inverter circuits are highly desired for both scientific studies and industry applications. Here, large-area and ordered polymer films are prepared by a bar-coating method at a rate of 120 mm s^-1 in air. Atomic force microscopy and grazing-incidence wide-angle X-ray scattering analysis indicate uniform edge-on poly(fluoroisoindigo-difluorobithiophene-fluoroisoindigo-bithiophene) (PFIBI-BT) in 11.7 ± 1 nm film (≈5 layers). The elongated, uniformly oriented grains can reduce the adverse effects of the grain boundaries and facilitate charge transport in polymers. Furthermore, OFETs based on parallel film show high hole/electron mobilities up to 5.5/4.5 cm² V^-1 s^-1 , which are approximately nine times of the devices prepared by spin-coating. The gain of the inverter is as high as 174, which is one of the highest values in polymer inventers currently. These results demonstrate that the excellent bipolar performance of few-layer PFIBI-BT can be ensured while achieving the compatibility of the experimental process with industrial preparation.

Keywords: ambipolar; bar coating; edge-on polymers; organic field-effect transistors.

Abstract

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