We study the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer WSe 2 back-gated transistors with Ni / Au contacts. Our investigation shows that the removal of a layer of poly(methyl methacrylate) (PMMA) or a decrease of the pressure change the device conductivity from p- to n-type. From the temperature behavior of the transistor transfer characteristics, a gate-tunable Schottky barrier at the contacts is demonstrated and a barrier height of ~ 70 meV in the flat-band condition is measured. We also report and discuss a temperature-driven change in the mobility and the subthreshold swing that is used to estimate the trap density at the WSe 2 / SiO 2 interface. Finally, from studying the spectral photoresponse of the WSe 2 , it is proven that the device can be used as a photodetector with a responsivity of ~ 0.5 AW - 1 at 700 nm and 0.37 mW / cm 2 optical power.
Keywords: 2D materials; PMMA; field effect transistors; tungsten diselenide.