Narrowband ultraviolet (UV) photodetectors are highly desired in multiple areas. Photodetectors based on organic-inorganic nanocomposites offer high sensitivity, widely adjustable response range, light weight, and low-temperature solution processibility. However, the broad absorption range of organic and inorganic semiconductor materials makes it difficult to achieve a narrowband detection feature for nanocomposite photodetectors. In this work, nanocomposite thin films containing the wide band gap conjugated polymer poly[(9,9-dioctylfluorenyl-2,7-diyl)- alt- co-(bithiophene)] (F8T2) blended with wide band gap ZnO nanoparticles (NPs) serve as the active layers of the photodetectors. Narrowband UV photodetectors with high gain and low driving voltage are demonstrated by adopting a symmetric device structure, controlling the active layer composition and microstructure, and manipulating the light penetration depth in the active layer. The fabricated photodetector exhibits a high external quantum efficiency of 782% at 358 nm under a low forward bias of 3 V with the full-width at half-maximum of 16 nm. Combined with a low dark current, a high specific detectivity of 8.45 × 1012 Jones is achieved. The impacts of the F8T2:ZnO NPs weight ratio and the device structure on the UV-selectivity and the device performance are investigated and discussed. Our method offers a pathway to design and fabricate narrowband UV photodetectors.
Keywords: nanocomposite; narrowband; photodetectors; photomultiplication; ultraviolet.