Data on liquid gated CNT network FETs on flexible substrates

Murugathas Thanihaichelvan; Leo A Browning; Marissa P Dierkes; Roger Martinez Reyes; Andrew V Kralicek; Colm Carraher; Colleen A Marlow; Natalie O V Plank

doi:10.1016/j.dib.2018.09.093

Data on liquid gated CNT network FETs on flexible substrates

Data Brief. 2018 Oct 2:21:276-283. doi: 10.1016/j.dib.2018.09.093. eCollection 2018 Dec.

Authors

Murugathas Thanihaichelvan^{1

2

3}, Leo A Browning^{1

2}, Marissa P Dierkes⁴, Roger Martinez Reyes⁴, Andrew V Kralicek⁵, Colm Carraher⁵, Colleen A Marlow⁴, Natalie O V Plank^{1

2}

Affiliations

¹ School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington 6021, New Zealand.
² The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand.
³ Department of Physics, University of Jaffna, Jaffna 40000, Sri Lanka.
⁴ Physics Department, California Polytechnic State University, San Luis Obispo, CA 93407, United States.
⁵ The New Zealand Institute for Plant & Food Research Limited, Auckland 1142, New Zealand.

Abstract

This article presents the raw and analyzed data from a set of experiments performed to study the role of junctions on the electrostatic gating of carbon nanotube (CNT) network field effect transistor (FET) aptasensors. It consists of the raw data used for the calculation of junction and bundle densities and describes the calculation of metallic content of the bundles. In addition, the data set consists of the electrical measurement data in a liquid gated environment for 119 different devices with four different CNT densities and summarizes their electrical properties. The data presented in this article are related to research article titled "Metallic-semiconducting junctions create sensing hot-spots in carbon nanotube FET aptasensors near percolation" (doi:10.1016/j.bios.2018.09.021) [1].