Twist angle-dependent conductivities across MoS2/graphene heterojunctions

Mengzhou Liao; Ze-Wen Wu; Luojun Du; Tingting Zhang; Zheng Wei; Jianqi Zhu; Hua Yu; Jian Tang; Lin Gu; Yanxia Xing; Rong Yang; Dongxia Shi; Yugui Yao; Guangyu Zhang

doi:10.1038/s41467-018-06555-w

Twist angle-dependent conductivities across MoS₂/graphene heterojunctions

Nat Commun. 2018 Oct 4;9(1):4068. doi: 10.1038/s41467-018-06555-w.

Authors

Mengzhou Liao^{1

2}, Ze-Wen Wu³, Luojun Du^{1

2}, Tingting Zhang^{1

2

3}, Zheng Wei^{1

2}, Jianqi Zhu^{1

2}, Hua Yu^{1

2}, Jian Tang^{1

2}, Lin Gu^{1

2}, Yanxia Xing³, Rong Yang^{1

2

4}, Dongxia Shi^{1

2

4}, Yugui Yao⁵, Guangyu Zhang^{6

7

8

9}

Affiliations

¹ CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
² School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
³ Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
⁴ Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
⁵ Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China. ygyao@bit.edu.cn.
⁶ CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. gyzhang@aphy.iphy.ac.cn.
⁷ School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China. gyzhang@aphy.iphy.ac.cn.
⁸ Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China. gyzhang@aphy.iphy.ac.cn.
⁹ Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China. gyzhang@aphy.iphy.ac.cn.

Abstract

Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS₂/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS₂/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS₂ devices as well as other TMDCs devices contacted by graphene.

Publication types

Research Support, Non-U.S. Gov't