Large intrinsic anomalous Hall effect in half-metallic ferromagnet Co3Sn2S2 with magnetic Weyl fermions

Qi Wang; Yuanfeng Xu; Rui Lou; Zhonghao Liu; Man Li; Yaobo Huang; Dawei Shen; Hongming Weng; Shancai Wang; Hechang Lei

doi:10.1038/s41467-018-06088-2

Large intrinsic anomalous Hall effect in half-metallic ferromagnet Co₃Sn₂S₂ with magnetic Weyl fermions

Nat Commun. 2018 Sep 11;9(1):3681. doi: 10.1038/s41467-018-06088-2.

Authors

Qi Wang¹, Yuanfeng Xu^{2

3}, Rui Lou¹, Zhonghao Liu⁴, Man Li^{1

5}, Yaobo Huang⁵, Dawei Shen⁴, Hongming Weng^{6

7

8}, Shancai Wang⁹, Hechang Lei¹⁰

Affiliations

¹ Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100872, Beijing, China.
² Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
³ School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
⁴ State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics, SIMIT, Chinese Academy of Sciences, 200050, Shanghai, China.
⁵ Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 201204, Shanghai, China.
⁶ Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China. hmweng@iphy.ac.cn.
⁷ School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China. hmweng@iphy.ac.cn.
⁸ Collaborative Innovation Center of Quantum Matter, Beijing, China. hmweng@iphy.ac.cn.
⁹ Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100872, Beijing, China. scw@ruc.edu.cn.
¹⁰ Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100872, Beijing, China. hlei@ruc.edu.cn.

Abstract

The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspects in condensed matter physics and has been a controversial topic for a long time. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of occupied electronic states. In a magnetic Weyl semimetal with broken time-reversal symmetry, there are significant contributions to Berry curvature around Weyl nodes, possibly leading to a large intrinsic AHE. Here, we report the quite large AHE in the half-metallic ferromagnet Co₃Sn₂S₂ single crystal. By systematically mapping out the electronic structure of Co₃Sn₂S₂ both theoretically and experimentally, we demonstrate that the intrinsic AHE from the Weyl fermions near the Fermi energy is dominating. The intrinsic anomalous Hall conductivity depends linearly on the magnetization and can be reproduced by theoretical simulation, in which the Weyl nodes monotonically move with the constrained magnetic moment on Co atom.

Publication types

Research Support, Non-U.S. Gov't