Modern terahertz (THz) technology offers the advantage of enhanced target detection ability with high spatial and temporal resolutions in the THz band, which makes it a formidable threat to stealth targets. Consequently, THz absorbers have outstanding potential as an electromagnetic countermeasure. In this Letter, we design, fabricate, and characterize a THz absorber based on patterned graphene. We present the transfer, photolithography, and etching processes involved in graphene patterning, as well as the experimental measurements of the fabricated absorber. Our simulations show that with an increase in the Fermi energy, the performance of the designed absorber gradually improves and, finally, decreases slightly. Further, the absorption bandwidth first broadens and then narrows slightly. The effective bandwidth with absorption ≥90% ranges from 1.54 to 2.23 THz, with the relative bandwidth (RBW) reaching about 36.6%. Although the measured RBW (from ∼12% to ∼14% and then to ∼8%) slightly deviates from the simulated one, the position of the resonant frequency is well matched between theory and experiment. Moreover, we illuminate the absorption mechanism using the theory of destructive interference. This Letter can significantly contribute to the design, manufacture, and application of patterned graphene-based THz absorbers.