Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their operating wavelength to the yellow-red band. This requires an increased In content x in In x Ga1-x N, prevented by the indium segregation within the miscibility gap. Beyond the known advantage of dislocation-free growth on dissimilar substrates, nanowires may help to extend the compositional range of InGaN. However, the necessary control over the material homogeneity is still lacking. Here, we present In x Ga1-x N nanowires grown by hydride vapor phase epitaxy on silicon substrates, showing rather homogeneous compositions and emitting from blue to red. The InN fraction in nanowires is tuned from x = 0.17 up to x = 0.7 by changing the growth temperature between 630 °C and 680 °C and adjusting some additional parameters. A dedicated model is presented, which attributes the wide compositional range of nanowires to the purely kinetic growth regime of self-catalyzed InGaN nanowires without macroscopic nucleation. These results may pave a new way for the controlled synthesis of indium-rich InGaN structures for optoelectronic applications in the extended spectral range.