Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

Zhi-Xue Xu; Jian-Min Yan; Meng Xu; Lei Guo; Ting-Wei Chen; Guan-Yin Gao; Si-Ning Dong; Ming Zheng; Jin-Xing Zhang; Yu Wang; Xiao-Guang Li; Hao-Su Luo; Ren-Kui Zheng

doi:10.1021/acsami.8b09170

Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

ACS Appl Mater Interfaces. 2018 Sep 26;10(38):32809-32817. doi: 10.1021/acsami.8b09170. Epub 2018 Sep 12.

Authors

Zhi-Xue Xu^{1

2}, Jian-Min Yan¹, Meng Xu¹, Lei Guo¹, Ting-Wei Chen³, Guan-Yin Gao⁴, Si-Ning Dong⁵, Ming Zheng¹, Jin-Xing Zhang⁶, Yu Wang³, Xiao-Guang Li⁴, Hao-Su Luo¹, Ren-Kui Zheng^{1

3}

Affiliations

¹ State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China.
² University of Chinese Academy of Sciences , Beijing 100049 , China.
³ School of Materials Science and Engineering , Nanchang University , Nanchang 330031 , China.
⁴ Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China.
⁵ Department of Physics , University of Notre Dame , Notre Dame , Indiana 46556 , United States.
⁶ Department of Physics , Beijing Normal University , Beijing 100875 , China.

PMID: 30156403
DOI: 10.1021/acsami.8b09170

Abstract

We report the fabrication of 0.71Pb(Mg_1/3Nb_2/3)O₃-0.29PbTiO₃ (PMN-0.29PT)-based ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO₂) semiconductor thin films on PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (∼330%) of the SnO₂:Co films through the polarization switching of PMN-0.29PT at 300 K. Particularly, combining the ferroelectric gating with piezoresponse force microscopy, X-ray diffraction, Hall effect, and magnetoresistance (MR), we rigorously disclose that both sign and magnitude of the MR are intrinsically determined by the electron carrier density, which could modify the s-d exchange interaction of the SnO₂:Co films. Furthermore, we realized multilevel resistance states of the SnO₂:Co films by combining the ferroelectric gating with ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices.

Keywords: electronic properties; ferroelectric field effect device; ferroelectric single crystal; magnetoresistance; tin dioxide thin film.