Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

Pin-Guang Chen; Kuan-Ting Chen; Ming Tang; Zheng-Ying Wang; Yu-Chen Chou; Min-Hung Lee

doi:10.3390/s18092795

Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

Sensors (Basel). 2018 Aug 24;18(9):2795. doi: 10.3390/s18092795.

Authors

Pin-Guang Chen^{1

2}, Kuan-Ting Chen¹, Ming Tang³, Zheng-Ying Wang¹, Yu-Chen Chou¹, Min-Hung Lee⁴

Affiliations

¹ Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan.
² National Nano Device Laboratories, Hsinchu 30078, Taiwan.
³ Device Design Division, PTEK Technology Co., Ltd., Hsinchu 30059, Taiwan.
⁴ Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan. mhlee@ntnu.edu.tw.

Abstract

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.

Keywords: InAlN; high-electron-mobility transistor (HEMT); swing; wafer-scale.