This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN layer for investigating the strain-controlled recombination mechanism in the system. PL results turned out that tensile stress released samples had better PL performances as their external quantum efficiencies increased to 17%, 7 times larger than the one of regular sample. Detail analysis confirmed they had smaller nonradiative recombination rates ((2.5~2.8)×10-2 s-1 compared to (3.6~4.7)× 10-2 s-1), which was associated with the better crystalline quality and absence of dislocations or cracks. Furthermore, their radiative recombination rates were found more stable and were much higher ((5.7~5.8) ×10-3 s-1 compared to [9~7] ×10-4 s-1) at room temperature. This was ascribed to the suppression of shallow localized states on MQW interfaces, leaving the deep radiative localization centers inside InGaN layers dominating the radiative recombination.
Keywords: InGaN/GaN multiple quantum well; Luminescence; Silicon substrate; Time-resolved photoluminescence.