Integrated Surface Modification to Enhance the Luminescence Properties of K2TiF6:Mn4+ Phosphor and Its Application in White-Light-Emitting Diodes

Mu-Huai Fang; Chia-Shen Hsu; Chaochin Su; Wenjing Liu; Yu-Hua Wang; Ru-Shi Liu

doi:10.1021/acsami.8b12170

Integrated Surface Modification to Enhance the Luminescence Properties of K₂TiF₆:Mn⁴⁺ Phosphor and Its Application in White-Light-Emitting Diodes

ACS Appl Mater Interfaces. 2018 Sep 5;10(35):29233-29237. doi: 10.1021/acsami.8b12170. Epub 2018 Aug 23.

Authors

Mu-Huai Fang¹, Chia-Shen Hsu, Chaochin Su, Wenjing Liu², Yu-Hua Wang², Ru-Shi Liu¹

Affiliations

¹ Department of Chemistry , National Taiwan University , Taipei 106 , Taiwan.
² Key Laboratory for Special Function Materials and Structural Design of the Ministry of the Education, School of Physical Science and Technology , Lanzhou University , Lanzhou 730000 , China.

PMID: 30129360
DOI: 10.1021/acsami.8b12170

Abstract

Narrow-band Mn⁴⁺-doped fluoride phosphors have become a research hotspot worldwide. In this study, we propose integrated surface modification processes to enhance the performance and stability of the luminescence properties of K₂TiF₆:Mn⁴⁺ (KTF) phosphor. These integrated process are applied in the initial synthesis step, coating of the as-synthesized powder post-treatment process, and during the application of the phosphor in the white-light-emitting diode (WLED) device. Surface etching is conducted to remove impurities and small particles in KTF. Double-shell coating forms a stable protective layer outside the KTF. Atomic layer deposition is employed for the surface of the WLED device.

Keywords: atomic layer deposition; narrow-band-emitting; red fluoride phosphor; surface coating; white-light-emitting diodes.