High-aspect ratio β-Ga₂O₃ nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio β-Ga₂O₃ nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio β-Ga₂O₃ nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of β-Ga₂O₃ and expedite the integration of one-dimensional β-Ga₂O₃ into future electronics, sensors, and optoelectronics.
Keywords: Ga2O3; hydrothermal crystal growth; low dimensional structures; nanomaterials; nanorods.