Optical emission spectroscopy (OES) was used to detect the plasma distribution during the depositing process of diamond films with hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. The surface and cross section of deposited diamond films were characterized by scanning electron microscopy (SEM) and their quality was tested with Raman spectroscopy. OES results showed that the intensity of active species near the center is higher than that in marginal area in the case of linear array of hot filament. It is because of the higher temperature and stronger cracking ability near the filament. The variety of the characteristic peak intensity in central region is more gently than that of the plasma ball. Thermal radiation decreased when the distance from the hot filament increases, which results in less CH，CO groups cracked from acetone, lower intensity of Hα，Hβ excited by hydrogen and higher concentration of C2 group produced by reaction. SEM and Raman results showed that the quality of deposited diamond films deteriorated when the distance between hot filament and substrate varies from 4.5, 5.5 to 6.5 mm, which matches well with OES results.