Cross-sectional potential distribution of high open-circuit voltage bulk heterojunction photovoltaic device was measured using Kelvin probe force microscopy. Potential drop confined at cathode interface implies that photo-active layer is an effective p-type semiconductor. Potential values in field-free region show wide variation according to log-normal distribution. This potential dip prone to have holes captured during the diffusive motion, which can increase bimolecular recombination, while potential gradient in depletion region makes this potential dip smaller and the captured holes easily escape from dip region by Schottky barrier lowering.
Keywords: BHJ device; Energy band diagram; Kelvin probe force microscopy.