Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors

Ya-Zhong Dai; Na Ai; Yang Lu; Yu-Qing Zheng; Jin-Hu Dou; Ke Shi; Ting Lei; Jie-Yu Wang; Jian Pei

doi:10.1039/c6sc01380e

Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors

Chem Sci. 2016 Sep 1;7(9):5753-5757. doi: 10.1039/c6sc01380e. Epub 2016 Jun 13.

Authors

Ya-Zhong Dai¹, Na Ai¹, Yang Lu¹, Yu-Qing Zheng¹, Jin-Hu Dou¹, Ke Shi¹, Ting Lei¹, Jie-Yu Wang¹, Jian Pei¹

Affiliation

¹ Beijing National Laboratory for Molecular Sciences , Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education , Key Laboratory of Polymer Chemistry and Physics of Ministry of Education , Center for Soft Matter Science and Engineering , College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China . Email: jianpei@pku.edu.cn.

Abstract

With sp²-nitrogen atoms embedded in an isatin unit, a donor-acceptor (D-A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to -4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm² V^-1 s^-1 tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp²-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.