Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (κl ) and enhance the thermoelectric figure of merit (zT). Through a new process based on melt-centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a ≈60% reduction of κl compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid-fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb)2 Te3 alloys. A segmented leg of melt-centrifuged Bi0.5 Sb1.5 Te3 and Bi0.3 Sb1.7 Te3 could produce a high device ZT exceeding 1.0 over the whole temperature range of 323-523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high-efficiency porous thermoelectric materials through an unconventional melt-centrifugation technique.
Keywords: dislocation; liquid phase sintering; melt-centrifugation; p-type bismuth-antimony-telluride; thermoelectric.
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