Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

B A Andreev; K E Kudryavtsev; A N Yablonskiy; D N Lobanov; P A Bushuykin; L V Krasilnikova; E V Skorokhodov; P A Yunin; A V Novikov; V Yu Davydov; Z F Krasilnik

doi:10.1038/s41598-018-27911-2

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Sci Rep. 2018 Jun 21;8(1):9454. doi: 10.1038/s41598-018-27911-2.

Authors

Affiliations

¹ Institute for Physics of Microstructures of RAS, 603950, Nizhny Novgorod, Russia. boris@ipmras.ru.
² Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia.
³ Institute for Physics of Microstructures of RAS, 603950, Nizhny Novgorod, Russia.
⁴ Ioffe Institute, RAS, 194021, St.-Petersburg, Russia.

Abstract

The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·10¹⁹ cm^-3 to 3·10¹⁷ cm^-3. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm² at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.