Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Peng Cui; Jianghui Mo; Chen Fu; Yuanjie Lv; Huan Liu; Aijie Cheng; Chongbiao Luan; Yang Zhou; Gang Dai; Zhaojun Lin

doi:10.1038/s41598-018-27357-6

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Sci Rep. 2018 Jun 13;8(1):9036. doi: 10.1038/s41598-018-27357-6.

Authors

Peng Cui¹, Jianghui Mo², Chen Fu¹, Yuanjie Lv², Huan Liu³, Aijie Cheng³, Chongbiao Luan⁴, Yang Zhou⁵, Gang Dai⁵, Zhaojun Lin⁶

Affiliations

¹ School of Microelectronics, Shandong University, Jinan, 250100, China.
² National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China.
³ School of Mathematics, Shandong University, Jinan, 250100, China.
⁴ Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, Mianyang, 621999, China.
⁵ Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610200, China.
⁶ School of Microelectronics, Shandong University, Jinan, 250100, China. linzj@sdu.edu.cn.

Abstract

The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the effect of the different gate lengths on the PCF scattering potential was confirmed.