High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies

Mengchuan Tian; Xuefei Li; Tiaoyang Li; Qingguo Gao; Xiong Xiong; Qianlan Hu; Mengfei Wang; Xin Wang; Yanqing Wu

doi:10.1021/acsami.8b04065

High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies

ACS Appl Mater Interfaces. 2018 Jun 20;10(24):20219-20224. doi: 10.1021/acsami.8b04065. Epub 2018 Jun 6.

Authors

Mengchuan Tian¹, Xuefei Li¹, Tiaoyang Li¹, Qingguo Gao¹, Xiong Xiong¹, Qianlan Hu¹, Mengfei Wang¹, Xin Wang¹, Yanqing Wu¹

Affiliation

¹ Wuhan National High Magnetic Field Center and School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China.

PMID: 29847910
DOI: 10.1021/acsami.8b04065

Abstract

Tunable bandgap can be induced in Bernal-stacked bilayer graphene by a perpendicularly electric displacement field. Here, we carry out a comprehensive study on the material synthesis of CVD Bernal-stacked bilayer graphene and devices for amplifying and mixing at high frequencies. The transistors show large output current density with excellent current saturation with high intrinsic voltage gain up to 77. Positive extrinsic forward power gain | S₂₁|² has been obtained up to 5.6 GHz as well as high conversion gain of -7 dB for the mixers. The conversion gain dependence on tunable on/off ratio of the transistors has also been discussed.

Keywords: Bernal-stacked BLG; amplifiers; conversion gain; mixers; power gain; voltage gain.