Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Zhi-Qian Wu; Jing-Liang Yang; Nallappagar K Manjunath; Yue-Jiao Zhang; Si-Rui Feng; Yang-Hua Lu; Jiang-Hong Wu; Wei-Wei Zhao; Cai-Yu Qiu; Jian-Feng Li; Shi-Sheng Lin

doi:10.1002/adma.201706527

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS₂

Adv Mater. 2018 Jul;30(27):e1706527. doi: 10.1002/adma.201706527. Epub 2018 May 22.

Authors

Affiliations

¹ College of microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
² State Key Laboratory of Physical Chemistry of Solid Surfaces and College of Chemistry and Chemical Engineering, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, P. R. China.
³ Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211189, China.
⁴ State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China.

PMID: 29785792
DOI: 10.1002/adma.201706527

Abstract

2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS₂ can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical-to-electrical conversion efficiency. To overcome this shortcoming, a "gap-mode" plasmon-enhanced monolayer MoS₂ fluorescent emitter and photodetector is designed by squeezing the light-field into Ag shell-isolated nanoparticles-Au film gap, where the confined electromagnetic field can interact with monolayer MoS₂ . With this gap-mode plasmon-enhanced configuration, a 110-fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon-enhanced MoS₂ fluorescent emitters. In addition, a gap-mode plasmon-enhanced monolayer MoS₂ photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W^-1 is demonstrated, exceeding previously reported plasmon-enhanced monolayer MoS₂ photodetectors.

Keywords: Ag SHINs; MoS2; PL; gap-mode; photodetector.