High-Performance Photovoltaic Readable Ferroelectric Nonvolatile Memory Based on La-Doped BiFeO3 Films

Dong Li; Dongxing Zheng; Chao Jin; Wanchao Zheng; Haili Bai

doi:10.1021/acsami.8b06246

High-Performance Photovoltaic Readable Ferroelectric Nonvolatile Memory Based on La-Doped BiFeO₃ Films

ACS Appl Mater Interfaces. 2018 Jun 13;10(23):19836-19843. doi: 10.1021/acsami.8b06246. Epub 2018 May 30.

Authors

Dong Li¹, Dongxing Zheng¹, Chao Jin¹, Wanchao Zheng¹, Haili Bai¹

Affiliation

¹ Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science , Tianjin University , Tianjin 300350 , People's Republic of China.

PMID: 29781272
DOI: 10.1021/acsami.8b06246

Abstract

Epitaxial La_0.1Bi_0.9FeO₃ (LBFO) films with SrRuO₃ (SRO) bottom electrodes were fabricated on SrTiO₃(001) substrates by magnetron sputtering. The LBFO thin films exhibit strong ferroelectric properties. Nonvolatile reversible resistance switchings and switchable photovoltaic effects controlled by electric field have been observed in Pt/LBFO/SRO heterostructures. With the optimized LBFO film thickness, the observed room temperature pulsed-read resistance switching ratio can reach 10⁵% magnitude by applying ±2.7 V pulse voltages. Besides, the observed ferroelectric switchable photovoltaic effect in the visible wavelength range shows a large tunable open-circuit photovoltage from -75 to -330 mV. The switching mechanisms in resistance and photovoltaic effects are demonstrated to be directly related to the ferroelectric reversal, which can be attributed to the polarization-modulated interfacial barriers and deep trap states.

Keywords: bismuth ferrite; heterostructure; photovoltaic effect; polarization; resistance switching.